Cross-sectional dilation mode resonator with very high electromechanical coupling up to 10% using AlN

Author

Zuo, Chengjie ; Yun, Changhan H. ; Stephanou, Philip J. ; Park, Sang-June ; Lo, Chi-Shun T. ; Mikulka, Robert ; Lan, Je-Hsiung J. ; Velez, Mario F. ; Shenoy, Ravindra V. ; Kim, Jonghae ; Nowak, Matthew M.

Author_Institution

Qualcomm Inc., San Diego, CA, USA

fYear

2012

fDate

21-24 May 2012

Firstpage

1

Lastpage

4

Abstract

For the first time in the development of piezoelectric micromechanical resonators, this paper presents a new class of cross-sectional dilation mode resonators (XDMR) that achieve unprecedentedly high electromechanical coupling constant: k_t² up to 10% for aluminum nitride (AlN) based resonators and 19% for zinc oxide (ZnO) based resonators. Detailed discussions on the geometry design, FEM simulation, and process challenge are provided in this paper to give insight on this novel high-k_t² piezoelectric resonator technology and, more importantly, guide the future development of mechanical resonators with coherent 2D/3D mode shapes.

Keywords

II-VI semiconductors; aluminium compounds; finite element analysis; geometry; high-k dielectric thin films; micromechanical resonators; piezoelectric devices; wide band gap semiconductors; zinc compounds; 2D-3D mode shapes; AlN; FEM simulation; XDMR; ZnO; aluminum nitride based resonators; cross-sectional dilation mode resonator; geometry design; high electromechanical coupling; piezoelectric micromechanical resonators; piezoelectric resonator technology; zinc oxide based resonators; Film bulk acoustic resonators; Finite element methods; Geometry; Resonant frequency; Shape; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium (FCS), 2012 IEEE International

Conference_Location

Baltimore, MD

ISSN

1075-6787

Print_ISBN

978-1-4577-1821-2

Type

conf

DOI

10.1109/FCS.2012.6243598

Filename

6243598