Title :
Alternative MOS devices for the manufacture of high-density ICs
Author :
Marino, F.A. ; Meneghesso, G.
Author_Institution :
Univ. of Padova, Padova
Abstract :
We have developed and analyzed two alternative devices for the manufacture of high-density ICs, each of which is a FET that develop contemporarily the function of two classical transistors, allowing notably advantages in the realization of SRAM and logic circuits. We tested the effective functionality of these devices through Synopsys TCAD tools. We also extracted for each one of these a full set of electrical equations.
Keywords :
MOSFET; SRAM chips; integrated circuit manufacture; logic circuits; technology CAD (electronics); FET; MOS devices; SRAM; Synopsys TCAD tools; electrical equations; high-density IC manufacture; logic circuits; Aluminum; DH-HEMTs; Electrons; FETs; MOS devices; MOSFETs; Pulp manufacturing; Substrates; Switches; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422293
