DocumentCode
2657381
Title
Alternative MOS devices for the manufacture of high-density ICs
Author
Marino, F.A. ; Meneghesso, G.
Author_Institution
Univ. of Padova, Padova
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
We have developed and analyzed two alternative devices for the manufacture of high-density ICs, each of which is a FET that develop contemporarily the function of two classical transistors, allowing notably advantages in the realization of SRAM and logic circuits. We tested the effective functionality of these devices through Synopsys TCAD tools. We also extracted for each one of these a full set of electrical equations.
Keywords
MOSFET; SRAM chips; integrated circuit manufacture; logic circuits; technology CAD (electronics); FET; MOS devices; SRAM; Synopsys TCAD tools; electrical equations; high-density IC manufacture; logic circuits; Aluminum; DH-HEMTs; Electrons; FETs; MOS devices; MOSFETs; Pulp manufacturing; Substrates; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422293
Filename
4422293
Link To Document