A quantum mechanical mobility model for scaled NMOS transistors with ultra-thin high-K dielectrics and metal gate electrodes

Author

Zhang, Yanli ; Jin, Zhian ; Wang, Gan ; Liyanage, Luckshitha S. ; White, Marvin H.

Author_Institution

Lehigh Univ., Bethlehem

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

We develop a quantum mechanical model for electron mobility, including Coulomb scattering of carriers and surface roughness in scaled high-K, metal-gate, NMOS transistors, which predicts an increase in Coulomb scattering mobility and a slow decrease of surface roughness mobility with increasing the gate voltage. The total mobility is limited by the bulk mobility because of the need for highly-doped substrates for scaled 45nm node transistors.

Keywords

MOSFET; electron mobility; high-k dielectric thin films; surface roughness; Coulomb scattering mobility; electron mobility; metal gate electrodes; quantum mechanical mobility; scaled NMOS transistors; surface roughness mobility; ultra-thin high-K dielectrics; Electrodes; Electron mobility; High K dielectric materials; High-K gate dielectrics; MOSFETs; Particle scattering; Predictive models; Quantum mechanics; Rough surfaces; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422296

Filename

4422296