• DocumentCode
    2657482
  • Title

    Analysis of the BSIMSOI threshold voltage model for short channel PD-SOI DTMOS

  • Author

    P, A. Jiménez ; De la Hidalga-W, F.J. ; Hernandez-M, L. ; Rosales-Q, P.

  • Author_Institution
    Inst. Nacional de Astrofisica Opt. y Electron. (INAOE), Mexico City
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, the SCE models were reviewed, and we found that an improved definition of phis, which considers the effect of the mobile charge injected in the depletion region, must be used. As a result, we eliminated the discrepancy between the BSIMSOI model and PISCES simulations for short channel DTMOS.
  • Keywords
    MOSFET; semiconductor device models; silicon-on-insulator; BSIMSOI threshold voltage model; PISCES simulations; SCE models; mobile charge effect; n-MOSFET; short channel DTMOS; short channel PD-SOI DTMOS; Boundary conditions; Educational institutions; Extrapolation; MOSFET circuits; Poisson equations; Predictive models; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422299
  • Filename
    4422299
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2657482