Title :
Analysis of the BSIMSOI threshold voltage model for short channel PD-SOI DTMOS
Author :
P, A. Jiménez ; De la Hidalga-W, F.J. ; Hernandez-M, L. ; Rosales-Q, P.
Author_Institution :
Inst. Nacional de Astrofisica Opt. y Electron. (INAOE), Mexico City
Abstract :
In this paper, the SCE models were reviewed, and we found that an improved definition of phis, which considers the effect of the mobile charge injected in the depletion region, must be used. As a result, we eliminated the discrepancy between the BSIMSOI model and PISCES simulations for short channel DTMOS.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; BSIMSOI threshold voltage model; PISCES simulations; SCE models; mobile charge effect; n-MOSFET; short channel DTMOS; short channel PD-SOI DTMOS; Boundary conditions; Educational institutions; Extrapolation; MOSFET circuits; Poisson equations; Predictive models; Threshold voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422299
