Title :
Wavefunction penetration effect on C-V characteristic of double gate MOSFET
Author :
Alam, M.K. ; Alam, A. ; Ahmed, S. ; Rabbani, M.G. ; Khosru, Q.D.M.
Author_Institution :
Bangladesh Univ. of Eng. & Technol., Dhaka
Abstract :
We present the effect of wavefunction penetration on C-V characteristic of ultra-thin body double gate MOSFET using an accurate and numerically extremely efficient fully coupled one dimensional Schrodinger-Poisson self-consistent solver. Penetration effects have been studied and presented for different values of dielectric and silicon body thickness.
Keywords :
MOSFET; Poisson equation; Schrodinger equation; semiconductor device models; wave functions; C-V characteristic; Schrodinger-Poisson self-consistent solver; dielectric body thickness; double gate MOSFET; silicon body thickness; ultra-thin body MOSFET; wavefunction penetration effect; Boundary conditions; Capacitance; Capacitance-voltage characteristics; Dielectrics; Educational institutions; Electrodes; MOSFET circuits; Poisson equations; Voltage; Wave functions;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422300
