DocumentCode
2657509
Title
Role of Cu contents in the isothermal metallurgical reaction for the flip chip Sn-3.0Ag-[0.5 or 1.5]Cu joints with Cu/electroless Ni-P/immersion Au bonding pad during aging
Author
Jang, Guh-Yaw ; Duh, Jenq-Gong ; Tsai, Su-Yueh ; Lee, Chi-Rung
Author_Institution
Dept. of Mater. Sci. & Eng., National Tsing Hua Univ., Hsinchu
fYear
2006
fDate
27-28 June 2006
Firstpage
260
Lastpage
264
Abstract
Cu/electroless Ni/immersion Au metallization is usually used as bonding pad on the substrate side of flip chip solder joints. Sn-Ag-Cu solder is one of the promising candidates to replace the conventional Sn-Pb solder. Isothermal interfacial reaction in Sn-3.0Ag-(0.5 or 1.5)Cu solder joints with electroless Ni/immersion Au surface finish after aging at 150degC was investigated in this study. Intermetallic compounds (IMC) of (Cu1-y,Niy)6Sn5 , (Ni1-x,Cux)3Sn4 and P-rich layer formed between the solder and the EN layer in both Sn-Ag-Cu joints during aging. For the Sn-3.0Ag-0.5Cu joints after more than 2000 h aging, (Ni1-x,Cux)3Sn4 IMC gradually grew. Through the investigation of cross-sectional microstructural observation and quantitative analysis, the interfacial microstructure and the elemental distribution between the solder and bonding pad could be clearly revealed. It was demonstrated that Cu content in the solders near the solder/IMC interface played an important role in the growth of (Ni1-x,Cux)3Sn 4 and (Cu1-y,Nix)6Sn5
Keywords
ageing; copper alloys; electroless deposition; flip-chip devices; gold; immersion lithography; nickel; semiconductor device metallisation; silver alloys; solders; tin alloys; (CuNi)6Sn5; (NiCu)3Sn4; 150 C; Au; Ni; Sn-Ag-Cu; bonding pad; electroless Ni/immersion; flip chip; intermetallic compounds; isothermal metallurgical reaction; Aging; Bonding; Flip chip; Flip chip solder joints; Gold; Isothermal processes; Metallization; Soldering; Surface finishing; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
High Density Microsystem Design and Packaging and Component Failure Analysis, 2006. HDP'06. Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0488-6
Type
conf
DOI
10.1109/HDP.2006.1707603
Filename
1707603
Link To Document