DocumentCode
2657538
Title
Analysis of harmonic distortion in deep submicron CMOS
Author
Bucher, Matthias ; Bazigos, Antonios ; Nastos, Nikolaos ; Papananos, Yannis ; Krummenacher, François ; Yoshitomi, Sadayuki
Author_Institution
Tech. Univ. Crete, Chania, Greece
fYear
2004
fDate
13-15 Dec. 2004
Firstpage
395
Lastpage
398
Abstract
This paper presents a study of harmonic distortion measurement and modeling in an 0.14 um CMOS technology. Measurements and simulation of DC characteristics, as well as high-frequency harmonic distortion are presented. The new EKV3.0 compact MOSFET model is used to model DC and harmonic distortion characteristics.
Keywords
CMOS integrated circuits; MOSFET; circuit simulation; harmonic distortion; integrated circuit measurement; integrated circuit modelling; radiofrequency integrated circuits; 0.14 micron; CMOS technology; DC characteristics; EKV3.0 compact MOSFET model; harmonic distortion measurement; harmonic distortion modeling; high-frequency harmonic distortion; simulation; CMOS technology; Current measurement; Distortion measurement; Frequency measurement; Harmonic analysis; Harmonic distortion; MOS devices; MOSFET circuits; Radio frequency; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 2004. ICECS 2004. Proceedings of the 2004 11th IEEE International Conference on
Print_ISBN
0-7803-8715-5
Type
conf
DOI
10.1109/ICECS.2004.1399701
Filename
1399701
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