A new impact ionization current model applicable to both bulk and SOI MOSFETs by considering self-lattice-heating

Author

Wei, Chengqing ; Zhou, Xing ; See, Guan Huei

Author_Institution

Nanyang Technol. Univ., Singapore

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

In this paper, the analytical equations for the substrate current in scaled MOSFETs are developed based on energy-balance equation due to non-equilibrium transport, in which the maximum electric field is attributed to the spatially lagging electron temperature behind the local field. To the author´s knowledge, this is the first substrate current model with the lattice temperature Tt built in automatically, the excess substrate current phenomenon reported for the SOI MOSFET due to self-lattice heating can be exactly captured by this new substrate current model.

Keywords

MOSFET; electric fields; silicon-on-insulator; substrates; SOI MOSFET; bulk MOSFET; energy-balance equation; ionization current model; maximum electric field; nonequilibrium transport; self-lattice-heating; silicon-on-insulator; substrate current model; Educational institutions; Electrons; Equations; Heating; Impact ionization; Lattices; MOSFETs; Semiconductor device modeling; Tellurium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422304

Filename

4422304