Title :
A new impact ionization current model applicable to both bulk and SOI MOSFETs by considering self-lattice-heating
Author :
Wei, Chengqing ; Zhou, Xing ; See, Guan Huei
Author_Institution :
Nanyang Technol. Univ., Singapore
Abstract :
In this paper, the analytical equations for the substrate current in scaled MOSFETs are developed based on energy-balance equation due to non-equilibrium transport, in which the maximum electric field is attributed to the spatially lagging electron temperature behind the local field. To the author´s knowledge, this is the first substrate current model with the lattice temperature Tt built in automatically, the excess substrate current phenomenon reported for the SOI MOSFET due to self-lattice heating can be exactly captured by this new substrate current model.
Keywords :
MOSFET; electric fields; silicon-on-insulator; substrates; SOI MOSFET; bulk MOSFET; energy-balance equation; ionization current model; maximum electric field; nonequilibrium transport; self-lattice-heating; silicon-on-insulator; substrate current model; Educational institutions; Electrons; Equations; Heating; Impact ionization; Lattices; MOSFETs; Semiconductor device modeling; Tellurium; Temperature;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422304
