DocumentCode :
2657734
Title :
Start-up robustness against resonator-Qs defects in a 2-GHz FBAR VCO
Author :
Östman, Kim B. ; Valkama, Mikko
Author_Institution :
Sch. of Electr. Eng., Dept. of Micro- & Nanosci., Aalto Univ., Espoo, Finland
fYear :
2012
fDate :
21-24 May 2012
Firstpage :
1
Lastpage :
4
Abstract :
The root locus (RL) method is used to analyze the start-up robustness of a two-stage dual-resonator high-Q VCO. The VCO includes a parallel LC tank and an above-IC FBAR (fs = 2.15 GHz, Qs = 515) that is prone to contact defects during above-IC post-processing. Results obtained after careful circuit modeling explain the VCO´s start-up on f1 before transitioning to and settling on the desired frequency f0. The RL approach is shown to be effective in obtaining the constraints on resonator Qs and revealing VCO failure modes. Only severe fabrication defects (Qs <; 100) inhibit proper start-up on f0.
Keywords :
UHF oscillators; UHF resonators; acoustic resonators; bulk acoustic wave devices; voltage-controlled oscillators; FBAR VCO; RL method; VCO failure modes; above-IC FBAR; above-IC post-processing; contact defects; fabrication defects; frequency 2 GHz; parallel L tank; resonator-Q defects; root locus method; start-up robustness analysis; two-stage dual-resonator high-Q VCO; Film bulk acoustic resonators; Integrated circuit modeling; Mathematical model; Numerical models; Voltage-controlled oscillators; Oscillators; failure analysis; film bulk acoustic resonators; integrated circuits; pole-zero analysis; root locus;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control Symposium (FCS), 2012 IEEE International
Conference_Location :
Baltimore, MD
ISSN :
1075-6787
Print_ISBN :
978-1-4577-1821-2
Type :
conf
DOI :
10.1109/FCS.2012.6243615
Filename :
6243615
Link To Document :
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