• DocumentCode
    2657734
  • Title

    Start-up robustness against resonator-Qs defects in a 2-GHz FBAR VCO

  • Author

    Östman, Kim B. ; Valkama, Mikko

  • Author_Institution
    Sch. of Electr. Eng., Dept. of Micro- & Nanosci., Aalto Univ., Espoo, Finland
  • fYear
    2012
  • fDate
    21-24 May 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The root locus (RL) method is used to analyze the start-up robustness of a two-stage dual-resonator high-Q VCO. The VCO includes a parallel LC tank and an above-IC FBAR (fs = 2.15 GHz, Qs = 515) that is prone to contact defects during above-IC post-processing. Results obtained after careful circuit modeling explain the VCO´s start-up on f1 before transitioning to and settling on the desired frequency f0. The RL approach is shown to be effective in obtaining the constraints on resonator Qs and revealing VCO failure modes. Only severe fabrication defects (Qs <; 100) inhibit proper start-up on f0.
  • Keywords
    UHF oscillators; UHF resonators; acoustic resonators; bulk acoustic wave devices; voltage-controlled oscillators; FBAR VCO; RL method; VCO failure modes; above-IC FBAR; above-IC post-processing; contact defects; fabrication defects; frequency 2 GHz; parallel L tank; resonator-Q defects; root locus method; start-up robustness analysis; two-stage dual-resonator high-Q VCO; Film bulk acoustic resonators; Integrated circuit modeling; Mathematical model; Numerical models; Voltage-controlled oscillators; Oscillators; failure analysis; film bulk acoustic resonators; integrated circuits; pole-zero analysis; root locus;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frequency Control Symposium (FCS), 2012 IEEE International
  • Conference_Location
    Baltimore, MD
  • ISSN
    1075-6787
  • Print_ISBN
    978-1-4577-1821-2
  • Type

    conf

  • DOI
    10.1109/FCS.2012.6243615
  • Filename
    6243615