DocumentCode
2657734
Title
Start-up robustness against resonator-Qs defects in a 2-GHz FBAR VCO
Author
Östman, Kim B. ; Valkama, Mikko
Author_Institution
Sch. of Electr. Eng., Dept. of Micro- & Nanosci., Aalto Univ., Espoo, Finland
fYear
2012
fDate
21-24 May 2012
Firstpage
1
Lastpage
4
Abstract
The root locus (RL) method is used to analyze the start-up robustness of a two-stage dual-resonator high-Q VCO. The VCO includes a parallel LC tank and an above-IC FBAR (fs = 2.15 GHz, Qs = 515) that is prone to contact defects during above-IC post-processing. Results obtained after careful circuit modeling explain the VCO´s start-up on f1 before transitioning to and settling on the desired frequency f0. The RL approach is shown to be effective in obtaining the constraints on resonator Qs and revealing VCO failure modes. Only severe fabrication defects (Qs <; 100) inhibit proper start-up on f0.
Keywords
UHF oscillators; UHF resonators; acoustic resonators; bulk acoustic wave devices; voltage-controlled oscillators; FBAR VCO; RL method; VCO failure modes; above-IC FBAR; above-IC post-processing; contact defects; fabrication defects; frequency 2 GHz; parallel L tank; resonator-Q defects; root locus method; start-up robustness analysis; two-stage dual-resonator high-Q VCO; Film bulk acoustic resonators; Integrated circuit modeling; Mathematical model; Numerical models; Voltage-controlled oscillators; Oscillators; failure analysis; film bulk acoustic resonators; integrated circuits; pole-zero analysis; root locus;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency Control Symposium (FCS), 2012 IEEE International
Conference_Location
Baltimore, MD
ISSN
1075-6787
Print_ISBN
978-1-4577-1821-2
Type
conf
DOI
10.1109/FCS.2012.6243615
Filename
6243615
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