Title :
Study of low-temperature and post-stress hysteresis in high-k gate dielectrics
Author :
Wu, You-Lin ; Lin, Shi-Tin ; Yang, Chang Cheng ; Wu, Chien-Hung ; Chin, Albert
Author_Institution :
Nat. Chi Nan Univ., Puli
Abstract :
In this work, we present the comparison of hysteresis behaviors of HfAlON and HfSiON high-k dielectrics at low-temperature and subjected to constant voltage stress (CVS). The VFB instability in the HfAlON and HfSiON gate dielectric were deeply studied. A model is proposed to explain the VFB shift and hysteresis direction in thus two samples. We also treat the CVS voltage and CVS time dependence of hysteresis and VFB shift. Otherwise, the C-V hystereses were tested in a variety temperature system. The decreasing hysteresis with temperature is ascribed to the "freeze" traps.
Keywords :
dielectric hysteresis; dielectric materials; dielectric thin films; hafnium compounds; silicon compounds; HfAlON; HfSiON; constant voltage stress; freeze traps; high-k gate dielectrics; hysteresis behavior; temperature system; Capacitance-voltage characteristics; Channel bank filters; Educational institutions; Electron traps; High-K gate dielectrics; Hysteresis; Polarization; Stress; Temperature; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422317
