Title :
A comparative study of Mos memory structures that contain platinum or gold nanoparticles
Author :
Sargentis, Ch ; Giannakopoulos, K. ; Travlos, A. ; Tsamakis, D.
Author_Institution :
Nat. Tech. Univ. of Athens, Athens
Abstract :
In this work, electrical characteristics of two types MOS memory structures: one that contains platinum and one that contains gold nanoparticles, embedded between two dielectric layers, a thin "tunneling" SiO2 and a thicker HfO2 "control" layer has been compared. The nanoparticles are formed during simple electron-gun deposition of a very small quantity of platinum or gold, at room temperature, on 3.5 nm of SiO2, which was thermally grown on a Si wafer. The nanoparticles are formed without any annealing. Then, they are capped with a HfO2 layer.
Keywords :
MIS structures; MOS memory circuits; dielectric thin films; gold; hafnium compounds; nanoparticles; nanotechnology; platinum; silicon compounds; tunnelling; MOS memory structures; SiO2-Au-HfO2; SiO2-Pt-HfO2; dielectric layers; electron-gun deposition; gold nanoparticles; platinum nanoparticles; size 3.5 nm; temperature 293 K to 298 K; tunneling; Annealing; Dielectrics; Electric variables; Gold; Hafnium oxide; Nanoparticles; Platinum; Temperature; Thickness control; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422319
