Ballisticity at very low drain bias in DG SOI Nano-MOSFETs

This work presents a thorough study of quasi-ballistic transport in DGSOI MOSFETs at very low drain-to-source bias. The simulations performed with a Quantum corrected Ensemble Monte Carlo simulator (Q-EMC) show contrasting trends in the nanoballisticity at moderate and low lateral field. For each regime, the mechanisms governing the quasi-ballistic transport are analyzed. The ratio between transit time and relaxation time explains why the proportion of ballistic carriers increases with drain bias until VD ap kT/q.