Non-isothermal circuit for SOI MOSFETs for electrothermal simulation of SOI integrated circuits

A non-isothermal circuit is proposed in this work for SOI MOSFETs, derived from a previously developed steady-state SOI heat flow model. The heat flow model was developed from the heat flow equation in SOI structure accounting for the non-isothermal profile on the Si island, heat loss to BOX and heat flow to FOX and metal contacts. A non-isothermal circuit for SOI MOSFETs has been presented and applied to electrothermal simulation of a cascode SOI current mirror. It was demonstrated that change in layout structure may evidently vary heat flow in devices/interconnects and alter device temperatures and thermal coupling among devices.