DocumentCode :
2658155
Title :
Deposition of nanocrystalline silicon thin film without substrate heating for flexible electronics
Author :
Han, Sang-Myeon ; Kim, Sun-Jae ; Park, Joong-Hyun ; Kuk, Seung-Hee ; Han, Min-Koo
Author_Institution :
Seoul Nat. Univ., Seoul
fYear :
2007
fDate :
12-14 Dec. 2007
Firstpage :
1
Lastpage :
2
Abstract :
The purpose of our work is to report the characteristics of nanocrystalline silicon (nc-Si) thin films deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) without substrate heating suitable for low temperature process thin film devices which can be applied to flexible electronics. For flexible displays, it is inevitable to limit the process temperature to avoid deforming substrates like plastics.
Keywords :
flexible electronics; nanostructured materials; plasma CVD; semiconductor thin films; silicon; Si; flexible electronics; inductively coupled plasma chemical vapor deposition; nanocrystalline silicon thin film; Flexible electronics; Heating; Nanoscale devices; Plasma displays; Plasma temperature; Semiconductor thin films; Silicon; Sputtering; Substrates; Thin film devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
Type :
conf
DOI :
10.1109/ISDRS.2007.4422334
Filename :
4422334
Link To Document :
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