Title :
Microleverage DETF Aluminum Nitride resonating accelerometer
Author :
Vigevani, Gabriele ; Goericke, Fabian T. ; Pisano, Albert P. ; Izyumin, Igor I. ; Boser, Bernhard E.
Author_Institution :
Dept. of Mech. Eng., Univ. of California at Berkeley, Berkeley, CA, USA
Abstract :
In this work, we present a novel microleverage Double Ended Tuning Fork (DETF) resonant accelerometer made of thin film piezoelectric Aluminum Nitride (AlN). The development and characterization of this novel design is discussed through a Finite Element Analysis (FEA) and experimentally demonstrated. The entire accelerometer structure is made of 2 μm of highly c-axis oriented piezoelectric AlN with 100 nm platinum as top and bottom electrode. The preliminary characterization of the accelerometer was performed in a vacuum chamber at a pressure of 4 Torr and achieved a sensitivity of 18.1 Hz/g (i.e. 54 ppm/g) along the sensing axis and 0.1 Hz/g along the cross axis.
Keywords :
III-V semiconductors; accelerometers; aluminium compounds; finite element analysis; micromechanical resonators; microsensors; piezoelectric thin films; piezoelectric transducers; wide band gap semiconductors; FEA; accelerometer structure; bottom electrode; c-axis oriented piezoelectric; finite element analysis; microleverage DETF aluminum nitride resonating accelerometer; microleverage double ended tuning fork resonant accelerometer; pressure 4 torr; size 100 nm; thin film piezoelectric aluminum nitride; top electrode; vacuum chamber; Acceleration; Accelerometers; Frequency measurement; Micromechanical devices; Resonant frequency; Sensitivity; Temperature measurement;
Conference_Titel :
Frequency Control Symposium (FCS), 2012 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1821-2
DOI :
10.1109/FCS.2012.6243634
