DocumentCode :
2658236
Title :
1 GHz bulk acoustic wave slanted finger interdigital transducers in aluminum nitride for wideband applications
Author :
Kuo, Nai-Kuei ; Fernandez, Jeronimo Segovia ; Piazza, Gianluca
Author_Institution :
Dept. of Electr. & Syst. Eng., Univ. of Pennsylvania, Philadelphia, PA, USA
fYear :
2012
fDate :
21-24 May 2012
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents the first experimental demonstration of bulk acoustic wave (BAW) slanted finger interdigital transducer (SFIT) delay line in aluminum nitride (AlN) thin film operating around 1 GHz. The SFIT is used to electro-acoustically transduce the Lamb wave S0 mode. The AlN Lamb SFITs were micromachined and experimentally demonstrated to have a band-pass response with a maximum insertion loss (IL) of 26 dB, fractional bandwidth (6 dB) of 7.9%, and a shape factor (-30 dB) of 1.8. This device displays a small form factor of 150 μm × 421 μm. The transmission response of the measured devices was confirmed to match the impulse response model. However, large pass-band ripples were observed in the device due to the acoustic reflections within the interdigitated fingers. In order to verify the reflection effect, AlN lateral field excitation (LFE) SFITs were also microfabricated. Because of the absence of the bottom floating electrode and the use of a thicker AlN membrane in this configuration, the acoustic mismatch between interdigital transducers (IDTs) is reduced and so is the magnitude of the associated ripple (from 5 dB to 3.5 dB).
Keywords :
III-V semiconductors; acoustic delay lines; acoustic variables measurement; acoustic wave reflection; acoustic wave transmission; acoustoelectric transducers; aluminium compounds; bulk acoustic wave devices; interdigital transducers; microfabrication; micromachining; surface acoustic wave transducers; thin film devices; transient response; wide band gap semiconductors; AlN; AlN thin film; BAW SFIT delay line; Lamb wave S0 mode; acoustic mismatch; acoustic reflections; band-pass response; bottom floating electrode; bulk acoustic wave slanted finger interdigital transducers; electro-acoustically transduction; form factor; fractional bandwidth; frequency 1 GHz; impulse response model; interdigitated fingers; lateral field excitation; maximum insertion loss; microfabrication; micromachining; pass-band ripples; reflection effect; shape factor; thicker AlN membrane; transmission response; wideband applications; Acoustics; Bandwidth; Delay lines; Electrodes; Insertion loss; Reflection; Transducers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control Symposium (FCS), 2012 IEEE International
Conference_Location :
Baltimore, MD
ISSN :
1075-6787
Print_ISBN :
978-1-4577-1821-2
Type :
conf
DOI :
10.1109/FCS.2012.6243638
Filename :
6243638
Link To Document :
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