Title :
Optimization of PIN photodiodes parameters for enhanced proton radiation tolerance based on numerical simulations
Author :
Cappelletti, M.A. ; Cédola, A.P. ; Blancá, E. L Peltzer y
Abstract :
This work focuses on study of radiation induced displacement damage effects on silicon PIN photodiodes at both, dark and illumination conditions, by mean of numerical simulations. For fluences greater than a certain limiting value, relation between photocurrent and dark current decreases below ten, leading to an undesirable device operation. An iterative method is proposed for design optimization of PIN photodiodes to be used under irradiation, that minimize radiation effects on total reverse current and maximize device response to incident light.
Keywords :
iterative methods; optimisation; p-i-n photodiodes; proton effects; silicon; dark current; displacement damage effects; iterative method; numerical simulations; optimization; photocurrent; proton radiation tolerance; silicon PIN photodiodes; Dark current; Design optimization; Iterative methods; Lighting; Numerical simulation; PIN photodiodes; Photoconductivity; Protons; Radiation effects; Silicon;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422344
