Analysis of the mechanism and characteristic for energy loss in a gate-commutated thyristor

Gate commutated thyristor (GCT) is a novel power semiconductor device derived from gate turn-off thyristor (GTO). It integrates with gate driver circuit to construct integrated gate commutated thyristor (IGCT). The application technology of IGCT is growing up, however, its energy loss can only be evaluated by external circuit or be measured by instruments, and no literatures depicts theory analysis for composition of energy loss and estimation expressions of the GCT. Power loss mechanism due to structure features and the turn-on and turn-off Gate commutated thyristor (GCT) is a novel power semiconductor device derived from gate turn-off thyristor (GTO). It integrates with gate driver circuit to construct integrated gate commutated thyristor (IGCT). The application technology of IGCT is growing up, however, its energy loss can only be evaluated by external circuit or be measured by instruments, and no literatures depicts theory analysis for composition of energy loss and estimation expressions of the GCT. Power loss mechanism, due to structure features and the operation mechanism in the turn-on and turn-off state, of GCT was discussed in this paper.