Title :
N+shallow junction formation using plasma doping and rapid thermal annealing
Author :
Kong, Seong Ho ; Jung, Ho ; Kim, Jeong Eun ; Do, Seung Woo ; Oh, Jae Geun ; Hwang, Sun Hwan ; Lee, Jin Gu ; Ku, Ja Choon ; Lee, Jong-Ho ; Lee, Yong Hyun
Author_Institution :
Kyungpook Nat. Univ., Daegu
Abstract :
In this paper, n-type shallow junctions are formed with plasma doping technique, and examined by secondary ion mass spectrometer (SIMS), double crystal X-ray diffraction (DXRD) and 4-point probe analysis methods. Measured doping profiles reveal that the junction depth less than 300 Aring and minimum sheet resistance of 104.1 Omega are feasible.
Keywords :
X-ray diffraction; plasma applications; rapid thermal annealing; secondary ion mass spectroscopy; semiconductor doping; semiconductor junctions; SIMS; doping profiles; double crystal X-ray diffraction; four-point probe analysis; plasma doping; rapid thermal annealing; secondary ion mass spectrometer; shallow junction formation; Annealing; Doping profiles; Plasma applications; Plasma measurements; Plasma sources; Plasma temperature; Plasma x-ray sources; Substrates; Surface resistance; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422355
