Title :
Dimensional dependences of the dynamic-NBTI with 1.2 nm N20-ISSG oxynitrides
Author :
Lai, Chao Sung ; Huang, D.C. ; Chung, S.S.
Author_Institution :
Chang Gung Univ., Kwei-Shan
Abstract :
In this paper, we compare RTO, N2O-ISSG and RPNO ultrathin oxynitride gate dielectrics with equal physical oxide thickness of 12 A under negative bias temperature instability (NBTI) degradation and/or dynamic NBTI (DNBTI) reliability for ultra-thin SiON gate dielectrics in pMOSFET devices. It was found that the N2O-ISSG oxynitride gate dielectric film demonstrates good interface properties and excellent reliability. This is a very crucial issue for the present and future CMOS ULSI using ultra-thin SiON gate dielectrics in pMOSFET devices.
Keywords :
MOSFET; dielectric thin films; interface phenomena; N2O-ISSG; RPNO ultrathin oxynitride gate dielectrics; RTO; interface properties; negative bias temperature instability; pMOSFET devices; size 1.2 nm; Degradation; Dielectric devices; Dielectric films; Hydrogen; MOSFET circuits; Niobium compounds; Nitrogen; Semiconductor films; Stress; Titanium compounds;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422358
