Title :
Charging effect in germanium nanocrystals embedded in a SiO2 matrix
Author :
Liu, Y. ; Chen, T.P. ; Yang, M. ; Gui, Dong ; Ding, L. ; Wong, J.I. ; Liu, Z.
Author_Institution :
Nanyang Technol. Univ., Singapore
Abstract :
Recently, Ge nanocluster or nanocrystal for the next-generation non-volatile memory (NVM) devices has received much attention. Although there is enormous research on the Ge-nanocrystal based NVM, there are few studies on the charging effect on the current conduction in the gate stack. As revealed by this work, the charging has a significant impact on current conduction in the gate stack and thus it may affect the NVM performance. This paper discusses in detail the effect of charging in nc-Ge.
Keywords :
electron mobility; germanium; nanostructured materials; silicon compounds; Ge; charging effect; current conduction; nanocrystals; next-generation nonvolatile memory devices; Capacitance-voltage characteristics; Educational institutions; Electrodes; Electron traps; Germanium; Nanocrystals; Nonvolatile memory; Semiconductor thin films; Tunneling; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422359
