• DocumentCode
    2658672
  • Title

    Charging effect in germanium nanocrystals embedded in a SiO2 matrix

  • Author

    Liu, Y. ; Chen, T.P. ; Yang, M. ; Gui, Dong ; Ding, L. ; Wong, J.I. ; Liu, Z.

  • Author_Institution
    Nanyang Technol. Univ., Singapore
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Recently, Ge nanocluster or nanocrystal for the next-generation non-volatile memory (NVM) devices has received much attention. Although there is enormous research on the Ge-nanocrystal based NVM, there are few studies on the charging effect on the current conduction in the gate stack. As revealed by this work, the charging has a significant impact on current conduction in the gate stack and thus it may affect the NVM performance. This paper discusses in detail the effect of charging in nc-Ge.
  • Keywords
    electron mobility; germanium; nanostructured materials; silicon compounds; Ge; charging effect; current conduction; nanocrystals; next-generation nonvolatile memory devices; Capacitance-voltage characteristics; Educational institutions; Electrodes; Electron traps; Germanium; Nanocrystals; Nonvolatile memory; Semiconductor thin films; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422359
  • Filename
    4422359