DocumentCode :
2658760
Title :
Improvement of Charge Programming and Retention by NH3 Plasma Treatment on Tunnel Oxide for SiO2/SixGe1-x/SiO2 Tri-layer Memory Devices
Author :
Fan, Kung Ming ; Lai, Chao Sung ; Fang, Yu Ching ; Ai, Chi Fong ; Chen, C.R.
Author_Institution :
Chang Gung Univ., Taoyuan
fYear :
2007
fDate :
12-14 Dec. 2007
Firstpage :
1
Lastpage :
2
Abstract :
The aim of this paper is to study, the NH3 plasma technique to improve the charge programming speed and retention time for the SiO2/SixGe1-x/SiO2 tri-layer memory devices. The modulated tunnel oxide energy band gap near SixGe1-x/TO interface is suitable for enhancing the programming and charge retention performance.
Keywords :
energy gap; plasma materials processing; semiconductor storage; silicon compounds; NH3; NH3 plasma treatment technique; SiO2-SixGe1-x-SiO2; charge programming; charge retention performance; modulated tunnel oxide energy band gap; tri-layer memory devices; Annealing; Channel bank filters; Materials science and technology; Nanocrystals; Nonvolatile memory; Plasma devices; Plasma materials processing; Plasma properties; Plasma temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
Type :
conf
DOI :
10.1109/ISDRS.2007.4422365
Filename :
4422365
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2658760
بازگشت