Title :
Evaluation of oscillator phase noise subject to reliability
Author :
Xiao, Enjun ; Yuan, J.S.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Central Florida Univ., Orlando, FL, USA
Abstract :
This paper systematically investigates the hot carrier (HC) and soft-breakdown (SBD) induced performance degradations in CMOS voltage-controlled oscillators. After the MOSFET device RF parameter degradations due to HC and SBD effects are experimentally evaluated, the HC and SBD induced performance degradations of a differential 5-stage ring oscillator and a cross-coupled LC oscillator are evaluated for the first time for 0.16 μm technology, focusing on phase noise. Two design techniques are proposed to improve the oscillator performance. The SpectraRF and BERT simulation results verified the effectiveness of the proposed design techniques.
Keywords :
MOSFET; hot carriers; phase noise; semiconductor device breakdown; semiconductor device noise; semiconductor device reliability; voltage-controlled oscillators; 0.16 micron; BERT simulation; CMOS voltage controlled oscillators; LC oscillator phase noise evaluation; MOSFET device; RF parameter degradation; RF parameter degradations; hot carrier effects; metal oxide semiconductor field effect transistor device; phase noise; radio frequency parameter degradations; reliability; ring oscillator; soft breakdown effects; spectraRF simulation; CMOS technology; Degradation; Frequency measurement; Hot carriers; MOSFETs; Phase noise; Radio frequency; Ring oscillators; Stress; Voltage-controlled oscillators;
Conference_Titel :
Frequency Control Symposium and PDA Exhibition Jointly with the 17th European Frequency and Time Forum, 2003. Proceedings of the 2003 IEEE International
Print_ISBN :
0-7803-7688-9
DOI :
10.1109/FREQ.2003.1275153
