DocumentCode
2658766
Title
Effect of Bi2 O3 doping on the electrical characteristics of Al-doped ZnO varistors with low residual voltage
Author
Long, Wangcheng ; He, Jinliang ; Hu, Jun ; Liu, Jun
Author_Institution
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
fYear
2010
fDate
17-20 Oct. 2010
Firstpage
1
Lastpage
4
Abstract
The effects of Bi2O3 doping on the electrical characteristics of Al-doped ZnO varistors were studied. The electrical characteristics and the microstructural parameters of the varistor samples with various content of Bi2O3 additive were investigated. With the amount of the doped Bi2O3 increased, the leakage currents of the Al-doped ZnO varistors are inhibited obviously. In addition, their breakdown electric fields decrease and their nonlinear coefficients increase accordingly. The XRD patterns show that the Bi-rich phase changes remarkably in the varistor samples as the delta-Bi2O3 are decreasing and the BiO2-x phase are increasing. The effects of Bi2O3 doping on the electrical characteristics of the Al-doped ZnO varistors are discussed based on the XRD patterns.
Keywords
semiconductor doping; varistors; Bi2O3; XRD pattern; ZnO; breakdown electric field; doping; electrical characteristics; leakage current; low residual voltage; nonlinear coefficient; varistor; Current measurement; Doping; Leakage current; Varistors; X-ray scattering; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulation and Dielectric Phenomena (CEIDP), 2010 Annual Report Conference on
Conference_Location
West Lafayette, IN
ISSN
0084-9162
Print_ISBN
978-1-4244-9468-2
Type
conf
DOI
10.1109/CEIDP.2010.5723977
Filename
5723977
Link To Document