• DocumentCode
    2658766
  • Title

    Effect of Bi2O3 doping on the electrical characteristics of Al-doped ZnO varistors with low residual voltage

  • Author

    Long, Wangcheng ; He, Jinliang ; Hu, Jun ; Liu, Jun

  • Author_Institution
    Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
  • fYear
    2010
  • fDate
    17-20 Oct. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The effects of Bi2O3 doping on the electrical characteristics of Al-doped ZnO varistors were studied. The electrical characteristics and the microstructural parameters of the varistor samples with various content of Bi2O3 additive were investigated. With the amount of the doped Bi2O3 increased, the leakage currents of the Al-doped ZnO varistors are inhibited obviously. In addition, their breakdown electric fields decrease and their nonlinear coefficients increase accordingly. The XRD patterns show that the Bi-rich phase changes remarkably in the varistor samples as the delta-Bi2O3 are decreasing and the BiO2-x phase are increasing. The effects of Bi2O3 doping on the electrical characteristics of the Al-doped ZnO varistors are discussed based on the XRD patterns.
  • Keywords
    semiconductor doping; varistors; Bi2O3; XRD pattern; ZnO; breakdown electric field; doping; electrical characteristics; leakage current; low residual voltage; nonlinear coefficient; varistor; Current measurement; Doping; Leakage current; Varistors; X-ray scattering; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation and Dielectric Phenomena (CEIDP), 2010 Annual Report Conference on
  • Conference_Location
    West Lafayette, IN
  • ISSN
    0084-9162
  • Print_ISBN
    978-1-4244-9468-2
  • Type

    conf

  • DOI
    10.1109/CEIDP.2010.5723977
  • Filename
    5723977