Title :
Low resistivity hafnium nitride thin films as diffusion barriers for Cu interconnects
Author :
Araujo, Roy A. ; Zhang, X. ; Wang, H.
Author_Institution :
Texas A&M Univ., College Station
Abstract :
In this paper, HfN on Si(100) has similar growth quality and electrical resistivity as HfN on MgO(100) (~30 muOmega-cm ), The resistivity values for HfN films on both substrates are much lower than that of TaN and TiN. Preliminary Cu diffusion test along with its low resistivity suggest that cubic HfN can be a promising candidate for Cu diffusion barriers.
Keywords :
copper; diffusion barriers; electrical resistivity; elemental semiconductors; hafnium compounds; interconnections; magnesium compounds; silicon; thin films; Cu; Cu diffusion test; Cu interconnects; MgO; Si; TaN; TiN; diffusion barriers; electrical resistivity; growth quality; hafnium nitride thin films; Conductivity; Copper; Hafnium; Physics; Plasma measurements; Pulsed laser deposition; Silicon; Sputtering; Substrates; Transistors;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422366
