DocumentCode
2658778
Title
Low resistivity hafnium nitride thin films as diffusion barriers for Cu interconnects
Author
Araujo, Roy A. ; Zhang, X. ; Wang, H.
Author_Institution
Texas A&M Univ., College Station
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
In this paper, HfN on Si(100) has similar growth quality and electrical resistivity as HfN on MgO(100) (~30 muOmega-cm ), The resistivity values for HfN films on both substrates are much lower than that of TaN and TiN. Preliminary Cu diffusion test along with its low resistivity suggest that cubic HfN can be a promising candidate for Cu diffusion barriers.
Keywords
copper; diffusion barriers; electrical resistivity; elemental semiconductors; hafnium compounds; interconnections; magnesium compounds; silicon; thin films; Cu; Cu diffusion test; Cu interconnects; MgO; Si; TaN; TiN; diffusion barriers; electrical resistivity; growth quality; hafnium nitride thin films; Conductivity; Copper; Hafnium; Physics; Plasma measurements; Pulsed laser deposition; Silicon; Sputtering; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422366
Filename
4422366
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