DocumentCode
2658811
Title
A new self-heating effects model for 4H-SiC MESFETs
Author
Cao, Quanjun ; Zhang, Yimen ; Zhang, Yuming ; Guo, Hui
Author_Institution
Xidian Univ., Xi´´an
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
In this paper, a CAD oriented self-heating effects model for 4H-SiC MESFETs is presented. We firstly give a brief derivative which combined a CAD-oriented quasi-analytical drain current model and the principle of self-heating effects for 4H-SiC MESFET, secondly present a relationship of the main parameters verses temperature for circuit oriented design, leading to a complete expression of self-heating effects model for 4H-SiC MESFETs. The validity of the present model and discussion are made last.
Keywords
Schottky gate field effect transistors; semiconductor device models; silicon compounds; wide band gap semiconductors; 4H-SiC MESFET; CAD oriented self-heating effects model; SiC; circuit oriented design; quasi-analytical drain current model; Design automation; Educational institutions; Electron mobility; Integrated circuit modeling; MESFET integrated circuits; MMICs; Microwave devices; Power generation; Radio frequency; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422368
Filename
4422368
Link To Document