Title :
1-D wavefunction localization and effective quantum wire behavior inside QWs deposited on textured GaN materials
Author :
Riyopoulos, Spilios ; Moustakas, Theodore
Author_Institution :
SAIC, San Diego
Abstract :
Recent experiments measuring photoluminescence from AlGaN quantum wells deposited on textured (multi-faceted) GaN material have reported an order of magnitude increase in the internal quantum efficiency (Cabalu et al., 2006). Furthermore narrow spot size electroluminescence showed that radiation is emitted predominantly from "quantum wedges" (QWG) formed at the locations were plane quantum wells (QW) intersect at an angle, such as shown in Fig la.
Keywords :
III-V semiconductors; gallium compounds; photoluminescence; semiconductor quantum wells; semiconductor quantum wires; wave functions; 1D wavefunction localization; GaN; photoluminescence; plane quantum wells; quantum wedges; quantum wire; semiconductor quantum wells; textured semiconductor materials; Carrier confinement; Charge carrier processes; Educational institutions; Energy states; Gallium nitride; Plasma confinement; Polarization; Radiative recombination; Spontaneous emission; Wire;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422369
