DocumentCode
2658831
Title
1-D wavefunction localization and effective quantum wire behavior inside QWs deposited on textured GaN materials
Author
Riyopoulos, Spilios ; Moustakas, Theodore
Author_Institution
SAIC, San Diego
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
Recent experiments measuring photoluminescence from AlGaN quantum wells deposited on textured (multi-faceted) GaN material have reported an order of magnitude increase in the internal quantum efficiency (Cabalu et al., 2006). Furthermore narrow spot size electroluminescence showed that radiation is emitted predominantly from "quantum wedges" (QWG) formed at the locations were plane quantum wells (QW) intersect at an angle, such as shown in Fig la.
Keywords
III-V semiconductors; gallium compounds; photoluminescence; semiconductor quantum wells; semiconductor quantum wires; wave functions; 1D wavefunction localization; GaN; photoluminescence; plane quantum wells; quantum wedges; quantum wire; semiconductor quantum wells; textured semiconductor materials; Carrier confinement; Charge carrier processes; Educational institutions; Energy states; Gallium nitride; Plasma confinement; Polarization; Radiative recombination; Spontaneous emission; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422369
Filename
4422369
Link To Document