DocumentCode
2658833
Title
Analysis of MOSFET failure modes in LLC resonant converter
Author
Choi, Won-suk ; Young, Sung-mo ; Kim, Dong-wook
Author_Institution
HV PCIA PSS Team, Fairchild Korea Semicond., Bucheon, South Korea
fYear
2009
fDate
18-22 Oct. 2009
Firstpage
1
Lastpage
6
Abstract
The trend in telecom power supplies is towards increasing power density. The drive for high power density in switch mode power supplies is pushing high switching frequency. This increase in switching frequency is limited by switching losses. To minimize switching loss, soft switching techniques such as zero voltage switching (ZVS) or zero current switching (ZCS) are adapted for high switching frequency converters. LLC resonant half bridge converters become essential topology for greater efficiency and lower profile in switching power supplies. Nowadays, it is widely accepted for telecom power supplies due to many advantages. However, many power MOSFET failures are reported on LLC resonant converter. This paper analyzes failure operation modes and mechanisms of power MOSFETs in LLC resonant converters and shows root cause of the failures. A solution for these failure modes is proposed to improve the system reliability.
Keywords
failure analysis; power MOSFET; resonant power convertors; zero current switching; zero voltage switching; LLC resonant converter; ZCS; ZVS; high switching frequency converters; or current switching; power MOSFET failures; soft switching techniques; system reliability; telecom power supplies; zero voltage switching; Failure analysis; MOSFET circuits; Power supplies; Resonance; Switches; Switching frequency; Switching loss; Telecommunication switching; Zero current switching; Zero voltage switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Telecommunications Energy Conference, 2009. INTELEC 2009. 31st International
Conference_Location
Incheon
Print_ISBN
978-1-4244-2490-0
Electronic_ISBN
978-1-4244-2491-7
Type
conf
DOI
10.1109/INTLEC.2009.5351877
Filename
5351877
Link To Document