Title :
GaN MESFET growth on vicinal sapphire by MOVPE
Author :
Chang, Shoou-Jinn ; Huang, Chieh-Chih ; Lin, Jia-Ching ; Chang, Sheng-Po ; Cheng, Yi-Cheng ; Lin, Wen-Jen
Author_Institution :
Nat. Cheng Kung Univ., Tainan
Abstract :
In conclusion, a high mobility and high carrier concentration GaN MESFET was presented in this study. We can get the higher mobility 416 cm2/v-s and higher carrier concentration 4x1017 cm-3 in the channel of the sample grown on 1 -off sapphire. We can observe the thin film quality of samples grown on 1 -off sapphire was better than samples grown on 0 -off sapphire.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium compounds; wide band gap semiconductors; MESFET growth; high carrier concentration; mobility carrier; thin film quality; vicinal sapphire; Educational institutions; Electrons; Epitaxial growth; Epitaxial layers; Gallium nitride; HEMTs; MESFETs; Semiconductor materials; Substrates; Temperature measurement;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422370
