Gate dielectric engineering of sub quarter micron AlGaN/GaN metal insulator semiconductor heterostructure field effect transistor (MISHFET) for high gain characteristics

The gate dielectric engineering of MISHFET structure offers superior performance over conventional HFETs in terms of high power handling capacity as well as high gain characteristics. The closed form analytical model for different gate dielectric schemes has been formulated by taking into account the effect of nonlinear polarization, which plays very important effect in AlGaN/GaN material system. The electrical characteristics like drain current and transconductance are evaluated for different gate dielectric schemes and compared with uniform dielectric configuration.