Title :
2-Dimensional simulation and characterization of deep-submicron AlGaN/GaN HEMTs for high frequency applications
Author :
Gangwani, P. ; Kaur, Ravneet ; Pandey, Sujata ; Haldar, Subhasis ; Gupta, Mridula ; Gupta, R.S.
Author_Institution :
Univ. of Delhi, New Delhi
Abstract :
This paper presents the characterization of deep-submicron AlGaN/GaN HEMTs for high performance applications, using ATLAS device simulator. The simulations reported in this work involve optimization of the investigated structure. The high RF performance of the device is attributed to the high quality of material and also to optimized device processing. The results are in good agreement with the experimental data as well as with the simulated data.
Keywords :
aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; ATLAS device simulator; AlGaN-GaN; RF performance; deep-submicron HEMT; high frequency applications; optimized device processing; two-dimensional simulation; Aluminum gallium nitride; Current density; Educational institutions; Frequency; Gallium nitride; HEMTs; MODFETs; Polarization; Transconductance; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422372
