DocumentCode
2658880
Title
2-Dimensional simulation and characterization of deep-submicron AlGaN/GaN HEMTs for high frequency applications
Author
Gangwani, P. ; Kaur, Ravneet ; Pandey, Sujata ; Haldar, Subhasis ; Gupta, Mridula ; Gupta, R.S.
Author_Institution
Univ. of Delhi, New Delhi
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
This paper presents the characterization of deep-submicron AlGaN/GaN HEMTs for high performance applications, using ATLAS device simulator. The simulations reported in this work involve optimization of the investigated structure. The high RF performance of the device is attributed to the high quality of material and also to optimized device processing. The results are in good agreement with the experimental data as well as with the simulated data.
Keywords
aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; ATLAS device simulator; AlGaN-GaN; RF performance; deep-submicron HEMT; high frequency applications; optimized device processing; two-dimensional simulation; Aluminum gallium nitride; Current density; Educational institutions; Frequency; Gallium nitride; HEMTs; MODFETs; Polarization; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422372
Filename
4422372
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