Title :
Two-dimensional analytical sub-threshold modeling and simulation of Gate Material Engineered HEMT for enhanced carrier transport Efficiency
Author :
Kumar, Sona P. ; Agrawal, Anju ; Chaujar, Rishu ; Gupta, Mridula ; Gupta, R.S.
Author_Institution :
Univ. of Delhi South Campus, New Delhi
Abstract :
A 2- dimensional analytical sub-threshold model for exploring the novel features of AlGaN/GaN gate material engineered (GME) high electron mobility transistor (HEMT) for reduced short channel effects (SCE) and enhanced carrier transport efficiency (CTE) is proposed. The model accurately predicts the channel potential and electric field (EF) of the conventional and GME HEMT structures. In GME HEMT, the gate is made up of two materials and the work function (WF) difference between the two gate materials results in (1) improved CTE (due to a more uniform electric field along the channel) leading to rapid acceleration of charge carriers and (2) diminished SCEs due to a step in the channel potential. The analytical results have been validated by the device simulator ATLAS.
Keywords :
aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; work function; ATLAS device simulator; AlGaN-GaN; carrier transport efficiency; charge carrier acceleration; gate material engineered HEMT; high electron mobility transistor; two-dimensional analytical sub threshold modeling; work function; Aluminum gallium nitride; Analytical models; Boundary conditions; Educational institutions; Electrons; Gallium nitride; HEMTs; Laboratories; Semiconductor devices; Semiconductor materials;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422374
