Advanced compact models: gateway to modern CMOS design

Author

Gildenblat, G. ; McAndrew, C. ; Wang, H. ; Wu, W. ; Foty, D. ; Lemaitre, L. ; Bendix, P.

Author_Institution

Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

638

Lastpage

641

Abstract

Recent progress in MOS device physics, model development, and model implementation processes has qualitatively changed the capabilities of compact models precisely at a time when the rapid expansion of RF MOSFET applications is imposing the most stringent demands on the new generation of MOSFET models. This work reviews the impact of the new modeling paradigm on MOSFET circuit simulation with particular attention to RF issues, non-quasi-static effects, and symmetric surface-potential-based models. General principles are illustrated with the simulation results using the latest generation compact MOSFET model (SP).

Keywords

CMOS integrated circuits; MOSFET; circuit simulation; integrated circuit modelling; radiofrequency integrated circuits; semiconductor device models; surface potential; CMOS design; MOS device physics; MOSFET circuit simulation; RF MOSFET compact models; nonquasi-static effects; symmetric surface-potential-based models; CMOS process; Circuit simulation; Large scale integration; Logic design; Logic devices; MOSFET circuits; Physics; Radio frequency; Semiconductor device modeling; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2004. ICECS 2004. Proceedings of the 2004 11th IEEE International Conference on

Print_ISBN

0-7803-8715-5

Type

conf

DOI

10.1109/ICECS.2004.1399761

Filename

1399761