DocumentCode :
2658923
Title :
Experimental investigation on the behaviour of IGBT at short-circuit during the on-state
Author :
Eckel, H.-G. ; Sack, L.
Author_Institution :
Inst. for Electrical Drives, Erlangen-Nurnberg Univ., Germany
Volume :
1
fYear :
1994
fDate :
5-9 Sep 1994
Firstpage :
118
Abstract :
Short-circuit withstand capability is an important feature of IGBTs for voltage-source inverter applications. Many manufacturers offer IGBTs with a guaranteed short-circuit withstand time. But in most cases, the short-circuit withstand capability is defined for the short-circuit type I. In this case, the load is already short-circuited when the IGBT is turned on. If the load is short-circuited when the IGBT carries current (short-circuit type II), the stress for the IGBT can be much higher. In this paper, the short-circuit type II behaviour of different IGBTs is investigated and a concept for a gate-drive circuit for improved short-circuit type II behaviour is introduced
Keywords :
bipolar transistor switches; circuit testing; insulated gate bipolar transistors; invertors; power bipolar transistors; power semiconductor switches; semiconductor device testing; short-circuit currents; switching circuits; IGBT; applications; gate-drive circuit; load; short-circuit; stress; voltage-source inverter; withstand capability; withstand time; Bridge circuits; Circuit testing; Clamps; Inductance; Insulated gate bipolar transistors; Inverters; Manufacturing; Steady-state; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Electronics, Control and Instrumentation, 1994. IECON '94., 20th International Conference on
Conference_Location :
Bologna
Print_ISBN :
0-7803-1328-3
Type :
conf
DOI :
10.1109/IECON.1994.397762
Filename :
397762
Link To Document :
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