The limiting frontiers of maximum DC voltage at the drain of SiC microwave power transistors in case of class-A power amplifier

In this paper, we have studied the limiting frontiers of maximum DC voltage, which can be applied at the drain of SiC MESFET in case of class-A power amplifier. In this technique a DC bias and RF input signal to the gate while a DC bias and RF output signal simultaneously was applied to the drain terminal. The RF source at the drain delivered a sine wave at the fundamental frequency thereby acting as a short at the higher harmonic frequencies. These signals thus also acted as an active match to the transistor. The results from the time domain simulations were then transformed into frequency domain using FFT in MATLAB.