Title :
Interface study of atomic-layer-deposited HfO2/NO-nitrided SiO2 gate dielectric stack on 4H SiC
Author :
Wu, Yanqing ; Wang, Shurui ; Xuan, Yi ; Shen, Tian ; Ye, Peide D. ; Cooper, James A., Jr.
Author_Institution :
Purdue Univ., Lafayette
Abstract :
In this paper, the authors have systematically investigated the integration of ALD high-k dielectrics on SiC substrates. Thin nitrided SiO2 (2nm-4nm)/HfO2 gate dielectric stack is identified to be suitable for future advanced SiC power MOSFET technology.
Keywords :
atomic layer deposition; hafnium compounds; high-k dielectric thin films; nitrogen compounds; silicon compounds; 4H SiC; HfO2-NO; HfO2/NO-nitrided SiO2; SiC; SiC power MOSFET technology; SiO2; atomic layer deposition; gate dielectric stack; high-k dielectrics; Aluminum oxide; Capacitance; Dielectric devices; Educational institutions; Electric resistance; Hafnium oxide; High-K gate dielectrics; Leakage current; Silicon carbide; Temperature;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422377
