• DocumentCode
    2658957
  • Title

    Interface study of atomic-layer-deposited HfO2/NO-nitrided SiO2 gate dielectric stack on 4H SiC

  • Author

    Wu, Yanqing ; Wang, Shurui ; Xuan, Yi ; Shen, Tian ; Ye, Peide D. ; Cooper, James A., Jr.

  • Author_Institution
    Purdue Univ., Lafayette
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, the authors have systematically investigated the integration of ALD high-k dielectrics on SiC substrates. Thin nitrided SiO2 (2nm-4nm)/HfO2 gate dielectric stack is identified to be suitable for future advanced SiC power MOSFET technology.
  • Keywords
    atomic layer deposition; hafnium compounds; high-k dielectric thin films; nitrogen compounds; silicon compounds; 4H SiC; HfO2-NO; HfO2/NO-nitrided SiO2; SiC; SiC power MOSFET technology; SiO2; atomic layer deposition; gate dielectric stack; high-k dielectrics; Aluminum oxide; Capacitance; Dielectric devices; Educational institutions; Electric resistance; Hafnium oxide; High-K gate dielectrics; Leakage current; Silicon carbide; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422377
  • Filename
    4422377
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2658957