Title :
Effect of the aspect ratio in AlGaN/GaN HEMT’s DC and small signal parameters
Author :
Huque, M.A. ; Eliza, S.A. ; Rahman, T. ; Huq, H.F. ; Islam, S.K.
Author_Institution :
Univ. of Tennessee, Knoxville
Abstract :
In this work the effects of the aspect ratio (gate width/ channel length, W/L) in DC and small signal parameters of AlGaN/GaN HEMTs are studied. An analytical model has been developed for theoretical calculation of the device DC performance at different aspect ratios. Experimental results of the fabricated AlGaN/GaN HEMT devices are used to validate the analytical model. Numerical simulations are performed to observe the effects of the aspect ratio on gate capacitance, transconductance and unity gain cut-off frequency.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; AlGaN-GaN; DC signal parameters; HEMT devices; aspect ratios; gate capacitance; small signal parameters; transconductance; Aluminum gallium nitride; Analytical models; Capacitance; Cutoff frequency; Gallium nitride; HEMTs; MODFETs; Numerical simulation; Performance gain; Transconductance;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422378
