Title :
Evolution of annealed undoped single crystal ZnO Surfaces and Implications for Schottky Barrier height
Author :
Pugel, D.E. ; Dhar, S. ; Hullavarad, S.S. ; Vispute, R.D. ; Varughese, B. ; Takeuchi, I. ; Venkatesan, T.
Author_Institution :
NASA GoddardSpace Flight Center, Greenbelt
Abstract :
In this article, the authors investigate the origin of the surface roughness of thermally-treated ZnO surfaces via atomic force microscopy, X-ray photoelectron spectroscopy (XPS), and Schottky barrier measurements.
Keywords :
II-VI semiconductors; Schottky barriers; X-ray photoelectron spectra; atomic force microscopy; surface roughness; zinc compounds; Schottky barrier height; Schottky barrier measurements; X-ray photoelectron spectroscopy; XPS; ZnO; atomic force microscopy; single crystal ZnO surfaces; surface roughness; thermally-treated ZnO surfaces; Annealing; Atomic force microscopy; Atomic measurements; Force measurement; Photoelectron microscopy; Rough surfaces; Schottky barriers; Surface roughness; Thermal force; Zinc oxide;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422379
