Title :
Modeling and design of a monolithically integrated power converter on SiC
Author :
Yu, L.C. ; Sheng, K. ; Zhao, J.H.
Author_Institution :
Rutgers Univ., Piscataway
Abstract :
4H-SiC is an attractive material for high temperature, high power density application due to its wide bandgap and high thermal conductivity. Lateral SiC power devices with very lower specific on-resistance has been reported (Y. Zhang et al., 2006). To fully explore its high temperature and high power density potential, not only power devices need to be fabricated on SiC, but also the circuitries for signal generation/processing, gate driver and control (J.S. Chen et al., 1998). This paper presents device modeling and circuit design of a power converter with fully integrated control based on SiC LJFET
Keywords :
integrated circuit design; junction gate field effect transistors; monolithic integrated circuits; power convertors; silicon compounds; wide band gap semiconductors; 4H-SiC; SiC; SiC LJFET; circuit design; device modeling; gate driver; high power density application; high temperature application; high thermal conductivity; integrated control; lateral SiC power devices; lower specific on-resistance; monolithically integrated power converter design; signal generation; signal processing; wide bandgap; Circuit synthesis; Conducting materials; Driver circuits; Photonic band gap; Power generation; Signal generators; Signal processing; Silicon carbide; Temperature control; Thermal conductivity;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422381
