Title :
Observation of kBT/f frequency noise in ultrahigh Q silicon nitride nanomechanical resonators
Author :
Fong, King Y. ; Pernice, Wolfram H P ; Tang, Hong X.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
In this report, we study the noise characteristics of the high quality factor nanomechanical resonators made of tensile-stressed stoichiometric silicon nitride. Quality factors (Q) of more than 2 million are measured at liquid helium temperature. With such high Q, the resonator noise performance is studied with high precision. We observe that while the amplitude noise agrees well with the thermomechanical noise, the phase noise is significantly higher than that. Such discrepancy is found to be due to the intrinsic resonance frequency fluctuation. We develop a mathematical model to describe the observed phenomenon and derive an expression relating the phase noise and the resonance frequency noise power spectral densities. From the phase noise measurement, we calculate the resonance frequency noise spectrum of the resonators and conclude that it has a kBT/f dependence.
Keywords :
Q-factor; nanoelectromechanical devices; phase noise; resonators; silicon compounds; high-quality factor nanomechanical resonator; intrinsic resonance frequency fluctuation; liquid helium temperature; mathematical model; phase noise measurement; resonance frequency noise power spectral density; resonator noise performance; tensile-stressed stoichiometric silicon nitride; thermomechanical noise; ultrahigh-Q-silicon nitride nanomechanical resonator; Fluctuations; Optical resonators; Phase noise; Resonant frequency; Temperature measurement; Thermomechanical processes;
Conference_Titel :
Frequency Control Symposium (FCS), 2012 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1821-2
DOI :
10.1109/FCS.2012.6243678