Title :
A new ultra-fast charge pumping measurement technique for NIT characterization without relaxation
Author :
Habersat, D.B. ; Gurfinkel, M. ; Horst, J. ; Kim, J. ; Xiong, H.D. ; Cheung, K. ; Suehle, J.S. ; Lelis, A.J. ; Bernstein, J.B. ; Shapira, Y.
Author_Institution :
U.S. Army Res. Lab., Cleveland
Abstract :
In this work, we revisit the charge pumping technique (Heremans et al., 1989 ) and use a novel measurement system to characterize the charge trapping in SiC MOSFETs. The focus in this paper will be on describing the method used and providing a preliminary analysis of the experimental data collected.
Keywords :
MOSFET; silicon compounds; wide band gap semiconductors; MOSFET; SiC; charge trapping measurement; ultra-fast charge pumping; wide band gap semiconductor; Charge measurement; Charge pumps; Circuits; Current measurement; Educational institutions; Measurement techniques; Pulse measurements; Silicon carbide; Stress measurement; Time measurement;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422384
