Title :
Projections of Schottky Barrier source-drain Gallium Nitride MOSFET based on TCAD simulation and experimental results
Author :
Ozbek, A. Merve ; Veety, Matthew T. ; Morgensen, Michael ; Ma, Lei ; Johnson, M.A.L. ; Barlage, Doug W.
Author_Institution :
North Carolina State Univ., Raleigh
Abstract :
This paper details the use of nickel Schottky barriers as the source and drain for a Schottky barrier GaN MOSFET (SB-MOSFET).
Keywords :
MOSFET; Schottky barriers; gallium compounds; nickel; semiconductor device models; technology CAD (electronics); GaN; Ni; SB-MOSFET; Schottky barrier GaN MOSFET; TCAD simulation; nickel Schottky barriers; source-drain gallium nitride MOSFET; Computational modeling; Dielectric substrates; Educational institutions; Equations; Frequency estimation; Gallium nitride; III-V semiconductor materials; MOSFET circuits; Nickel; Schottky barriers;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422385
