Title :
Effect of P-type cladding layer and P++-GaN layer of InGaN/GaN MQWs blue LED
Author :
Liao, Chun-Wei ; Lin, Yung-Hsiang ; Yen, Cheng-Ying ; Liu, Pei-Wen ; Lu, Yuan-Chieh ; Lin, Ray-Ming
Author_Institution :
Chang Gung Univ., Taoyuan
Abstract :
In this work, we modified the p-type epitaxy structure to improve the p-type metal-semiconductor ohmic contact. Further, we investigated the electrical and optical properties by adjusting the p-type cladding layer structure in the InGaN/GaN MQW samples.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; ohmic contacts; quantum well devices; semiconductor epitaxial layers; semiconductor quantum wells; InGaN-GaN; MQW blue LED; electrical properties; optical properties; p-type cladding layer; p-type epitaxy structure; p-type metal-semiconductor ohmic contact; Carrier confinement; Charge carrier processes; Gallium nitride; Laser sintering; Light emitting diodes; Ohmic contacts; Optical devices; Optical superlattices; Quantum well devices; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422389
