Title :
Introducing high performance crystalfree™ pMEMS oscillators
Author :
Bhugra, Harmeet ; Pan, Wanling ; Lei, Dino ; Lee, Seungbae
Author_Institution :
Integrated Device Technol. Inc. (IDTI), San Jose, CA, USA
Abstract :
High performance oscillators based on piezoelectrically transduced pMEMS™ resonators are introduced. pMEMS resonators consist of a piezoelectric material (AlN) on a single-crystal silicon layer substrate and typically have a quality factor of more than a few thousand and insertion loss close to -10dB. Plastic packaged pMEMS™ oscillators are immune to shock and vibration of 1500G and 20G, respectively, and have shown excellent long term frequency stability at 25°C, 125°C, -40C and hysteresis testing over -40°C to 125°C. Due to high quality factor and low motional impedance, oscillators based on pMEMS™ resonators can deliver low phase noise well below <;1.0ps for bandwidth from 12kHz to 20MHz.
Keywords :
micromechanical resonators; oscillators; bandwidth 12 kHz to 20 MHz; high performance crystal-free pMEMS oscillators; insertion loss; piezoelectric material; piezoelectrically transduced pMEMS resonators; plastic packaged pMEMS oscillators; quality factor; single-crystal silicon layer substrate; temperature -40 degC to 125 degC; Electric shock; Performance evaluation; Phase noise; Resonant frequency; Silicon; Vibrations;
Conference_Titel :
Frequency Control Symposium (FCS), 2012 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1821-2
DOI :
10.1109/FCS.2012.6243685
