Investigation of nanocrystalline diamond films as UV transparent Ohmic contacts to GaN

Author

Tadjer, Marko J. ; Hobart, Karl D. ; Caldwell, Joshua D. ; Mastro, Michael A. ; Feygelson, Tatyana I. ; Butler, James E. ; Alexson, Dimitri A. ; Kub, Fritz J.

Author_Institution

Univ. of Maryland, College Park

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

Nanocrystalline diamond (NCD) thin films are of interest due to their large bandgap and excellent thermal properties, which make them attractive for power device applications. The UV transparency of NCD films has been previously reported on Si and glass substrates. In addition, it has been demonstrated that NCD films grown on 4H-SiC exhibit a nearly ideal Schottky contact behavior. In this paper, the electrical contact properties of NCD films on GaN are investigated.

Keywords

III-V semiconductors; diamond; nanostructured materials; ohmic contacts; wide band gap semiconductors; GaN; UV transparent ohmic contacts; electrical contact; nanocrystalline diamond thin films; nearly ideal Schottky contact; power device application; Aluminum gallium nitride; Conductivity; Educational institutions; Electrical resistance measurement; Electrons; Gallium nitride; Ohmic contacts; Power engineering computing; Semiconductor films; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422391

Filename

4422391