DocumentCode :
2659185
Title :
Investigation of nanocrystalline diamond films as UV transparent Ohmic contacts to GaN
Author :
Tadjer, Marko J. ; Hobart, Karl D. ; Caldwell, Joshua D. ; Mastro, Michael A. ; Feygelson, Tatyana I. ; Butler, James E. ; Alexson, Dimitri A. ; Kub, Fritz J.
Author_Institution :
Univ. of Maryland, College Park
fYear :
2007
fDate :
12-14 Dec. 2007
Firstpage :
1
Lastpage :
2
Abstract :
Nanocrystalline diamond (NCD) thin films are of interest due to their large bandgap and excellent thermal properties, which make them attractive for power device applications. The UV transparency of NCD films has been previously reported on Si and glass substrates. In addition, it has been demonstrated that NCD films grown on 4H-SiC exhibit a nearly ideal Schottky contact behavior. In this paper, the electrical contact properties of NCD films on GaN are investigated.
Keywords :
III-V semiconductors; diamond; nanostructured materials; ohmic contacts; wide band gap semiconductors; GaN; UV transparent ohmic contacts; electrical contact; nanocrystalline diamond thin films; nearly ideal Schottky contact; power device application; Aluminum gallium nitride; Conductivity; Educational institutions; Electrical resistance measurement; Electrons; Gallium nitride; Ohmic contacts; Power engineering computing; Semiconductor films; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
Type :
conf
DOI :
10.1109/ISDRS.2007.4422391
Filename :
4422391
Link To Document :
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