DocumentCode :
2659189
Title :
Effectiveness of Ultra-FRFETTM for the HV-BLU system in LCD TVs
Author :
Kim, Dong-Soo ; Yeon, Jae-Eul ; Cho, Kyu-Min ; Kim, Hee-Jun
Author_Institution :
HV PCIA, Fairchild Korea Semicond., Bucheon, South Korea
fYear :
2009
fDate :
18-22 Oct. 2009
Firstpage :
1
Lastpage :
6
Abstract :
This paper introduces a newly improved MOSFET, ultra-FRFET of which Trr characteristic is much faster than that of the typical MOSFET and presents its effectiveness when it is applied to HV-BLU system of LCD TVs. The reverse recovery time, Trr of ultra-FRFET is shorter than 40 nsec and the peak value of reverse recovery current, irr is also much smaller compared to the typical MOSFET\´s, which are sufficient to prevent the MOSFET\´s failures without additional FRDs and diodes in HV-BLU system with a half-bridge resonant inverter topology worked by PWM method. In order to verify the validity, the loss analysis and the experimental for both cases, the conventional solution using typical MOSFETs with additional FRDs and new soution using only ultra-FRFETs are implemented for the HV-BLU of 40" LCD TV. As a result, the effectiveness of ultra-FRFET was verified and the results are presented in this paper.
Keywords :
MOSFET; PWM invertors; liquid crystal displays; resonant invertors; television; HV-BLU system; LCD TV; MOSFET; PWM method; resonant inverter topology; ultra-FRFETTM; Diodes; MOSFET circuits; Pulse width modulation inverters; Resonant inverters; TV; Topology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Telecommunications Energy Conference, 2009. INTELEC 2009. 31st International
Conference_Location :
Incheon
Print_ISBN :
978-1-4244-2490-0
Electronic_ISBN :
978-1-4244-2491-7
Type :
conf
DOI :
10.1109/INTLEC.2009.5351897
Filename :
5351897
Link To Document :
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