• DocumentCode
    2659214
  • Title

    Design and modeling of a high fT and fmax heterojunction bipolar transistor

  • Author

    Chan, Pik-Yiu ; Jain, Faquir C.

  • Author_Institution
    Univ. of Connecticut, Storrs
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This work presents an InGaAs/InP heterojunction bipolar transistor design aiming at lowering the transit time in the collector region by controlling and reducing the high field region in the structure, thus giving very high mobility in the collector region and a high fT for a given lateral size.
  • Keywords
    heterojunction bipolar transistors; InGaAs-InP; heterojunction bipolar transistor design; heterojunction bipolar transistor moldelling; transit time; Doping; Educational institutions; Electron devices; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Semiconductor process modeling; Solid modeling; USA Councils;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422393
  • Filename
    4422393
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2659214