DocumentCode
2659261
Title
A High Power MIC Passive Diode Receiver Protector with Integral STC Using Variable Basewidth Techniques
Author
Gawronski, M.J. ; Goldie, H.
fYear
1977
fDate
21-23 June 1977
Firstpage
191
Lastpage
194
Abstract
A passive MIC receiver protector using graded diode basewidths has been developed that handles 200 watt RF pulses at 10 percent duty rates on a 1.5 x 1.75 x 0.025 inch alumina substrate. Leakage power and recovery period are under 20 mW peak spike, 10 mW peak flat, and 0.8 mu s. Data on harmonic generation is included. Integral STC during the receive period is included with the associated MIC digital driver.
Keywords
Attenuation; Driver circuits; Insertion loss; Microwave integrated circuits; Noise figure; Power system protection; Pulse amplifiers; Radio frequency; Schottky diodes; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1977 IEEE MTT-S International
Conference_Location
San Diego, CA, USA
Type
conf
DOI
10.1109/MWSYM.1977.1124402
Filename
1124402
Link To Document