DocumentCode
2659285
Title
A Low Noise MIC GaAsFET Amplifier for 4 GHz Radio
Author
Knerr, R.H. ; Swan, C.B.
fYear
1977
fDate
21-23 June 1977
Firstpage
195
Lastpage
197
Abstract
A low noise amplifier for 4 GHz radio has been designed and is in manufacture. The noise figure is < 2 dB and the gain is typically 10 dB. Input and output return losses are > 25 dB. The insertion loss with failure of either the power supply of the low noise transistor is typically 5 to 8 dB. The amplifier uses a single GaAs Field Effect Transistor in conjunction with a passive failsafe by-pass network utilizing circulators. This approach permits the noise figure and the gain flatness to be optimized for each amplifier without compromising the input and output matches. It is concluded that this single-transistor amplifier design has significant advantages both in performance and in simplicity over the balanced amplifier design.
Keywords
Circulators; FETs; Gain; Gallium arsenide; Insertion loss; Low-noise amplifiers; Manufacturing; Microwave integrated circuits; Noise figure; Power supplies;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1977 IEEE MTT-S International
Conference_Location
San Diego, CA, USA
Type
conf
DOI
10.1109/MWSYM.1977.1124403
Filename
1124403
Link To Document