Title :
Strained-Si:C-source/drain NMOSFETs for channel strain enhancement
Author :
Lee, M.H. ; Chang, S.T. ; Huang, C.-F. ; Maikap, S. ; Shen, K.-W. ; Syu, R.-S. ; Liu, Y.-T.
Author_Institution :
Nat. Taiwan Normal Univ., Taipei
Abstract :
The carbon was incorporated in biaxial st-Si (stained Si) source/drain NMOSFET for channel strain enhancement. Due to ~52% lattice mismatch between silicon and carbon, the st-Si:C surface channel is under higher strain than that of st-Si, indicating that the carrier mobility can be enhanced significantly by theory. The resistance of st-Si:C with carbon increasing are similar with st-Si, and improved by the strain from underneath relaxed SiGe, as compared with Si:C/Si.
Keywords :
MOSFET; carbon; carrier mobility; elemental semiconductors; silicon; Si:C; biaxial stained silicon; carrier mobility; channel strain enhancement; lattice mismatch; source-drain NMOSFET; surface channel; CMOS technology; Capacitive sensors; Contact resistance; Educational institutions; Electron mobility; Electronic mail; Germanium silicon alloys; Lattices; MOSFETs; Silicon germanium;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422399
